Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance

摘要

The quasi-planar segmented-channel MOSFET (SegFET) design provides an evolutionary pathway for continued CMOS technology scaling, and can be fabricated using a conventional process flow starting with a corrugated substrate. It has been shown previously that the SegFET exhibits better short channel behavior compared to the conventional MOSFET. Recently, we have demonstrated further performance enhancement using mobility enhancement techniques such as using silicon-germanium as the channel material. This paper discusses the selective epitaxial growth of Si and SiGe layers to form corrugated-Si/SiGe substrates for enhanced p-channel SegFET performance.