Composition dependence of room temperature 1.54 um m Er~3+ luminescence from erbium doped silicon: oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

摘要

The composition dependence of room temperature 1.54 um m Er~3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH_4 and O_2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 deg C. The most intense Er~3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 deg C anneal and formation of silicon nanoclusters embedded in SiO_2 matrix. HIgh active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO_2 matrix are identified as key factors in producing the intense Er~3+ luminescence.