Antibacterial Silicon Oxide Thin Films Doped with Zinc and Copper Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition

摘要

Zn-doped and Cu-doped SiOx films were synthesized by atmospheric pressure plasma chemical vapor deposition to study their antibacterial efficiency against Gram-negative Escherichia coli and their cytotoxic effect on the growth of mouse cells. Zn-rich and Cu-rich particles with diameters up to several microns were found to be homogeneously distributed within the SiOx films. For both doping elements, bacteria are killed within the first three hours after exposure to the film surface. In contrast, mouse cells grow well on the surfaces of both film types, with a slight inhibition present only after the first day of exposure. The obtained results indicate that the films show a high potential for use as effective antibacterial surfaces for medical applications.