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High-Rate Deposition of Amorphous Silicon Thin Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Design and Production of the Atmospheric Pressure Plasma CVD Apparatus with Rotary Electrode.

机译：大气压等离子体化学气相沉积的非晶硅薄膜的高速率沉积。（第一个报告）。具有旋转电极的大气压等离子体CVD装置的设计与生产。

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Yuzo MORI; Kumayasu YOSHII; Kiyoshi YASUTAKE; Hiroaki KAKIUCHI; Seiichi KIYAMA; Hisaki TARUI; Yoichi DOMOTO;
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3. Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors [J] . Kakiuchi H., Ohmi H., Yamada T., Surface & Coatings Technology . 2013,第Null期

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4. Extremely high-rate deposition of silicon thin films prepared by atmospheric plasma CVD method with a rotary electrode [C] . Matsumoto, M., Shima, . 2003

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5. Experimental investigation of atmospheric pressure nonequilibrium plasma chemistry for plasma assisted chemical vapor deposition (PACVD) of diamond thin films [D] . Baldwin, Scott Keith, Jr. 1996

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6. Antibacterial Silicon Oxide Thin Films Doped with Zinc and Copper Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition [O] . Elisabeth Jäger, Jürgen Schmidt, Andreas Pfuch, 2019

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7. Weatherability of Amorphous Carbon Films Synthesized by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition [O] . 2017

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High-Rate Deposition of Amorphous Silicon Thin Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Design and Production of the Atmospheric Pressure Plasma CVD Apparatus with Rotary Electrode.

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