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Structure-property relastionships in SrRuO_3 epitaxial thin films

机译:SRRUO_3外延薄膜中的结构 - 财产迁移

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Epitaxial SrRuO_3 films were prepared on (001) SrTiO_3 substrates by pulsed laser deposition. The film structure was characterized by 4-circle x-ray diffraction and the electrical deposition. The film structure was characterized by 4-circlex-ray diffraction and the electrical behavior by temperature dependent resistivity measuremdents. With variations in the deposition conditions, significant changesin both structural and electricla properties were observed. When deposited under conditions favoring appreciable energetic bombardment, the SrRuO_3 films on SrTiO_3 exhibited extended in and out-of-plane lattice constants and increasedvalues of resistivity; in addition, a depression of the Curie temperature was measured. SrRuO_3 deposited under less aggressive conditions displayed structures and properties more similar to those associated with bulk crystals.
机译:通过脉冲激光沉积在(001)SRTIO_3基板上制备外延Srruo_3薄膜。薄膜结构的特征在于4圆形X射线衍射和电沉积。通过温度依赖性电阻率测量值,薄膜结构的特征在于4圈射线衍射和电动特性。随着沉积条件的变化,观察到结构和电动性能的显着变化。当在有利的条件下沉积有利于可观的能量轰炸时,SRTIO_3上的SRRUO_3薄膜展现在平面内和外平面的晶格常数和电阻率上增加;另外,测量静脉温度的凹陷。 Srruo_3在较少的侵略性条件下沉积的结构和性质更类似于与散装晶体相关的结构。

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