With SiC epitaxial thin film creation manner and SiC epitaxial thin film

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a SiC epitaxial thin film, enabling the uniform epitaxial growth of SiC on a 3 inch or larger area, and to provide a device for forming the SiC epitaxial thin film. ;SOLUTION: A SiC epitaxial device 1 is provided with a port 41 for charging highly pure C₂H₂ for forming a carbide layer on the surface of a Si substrate and with two independently controllable helicon spatter guns 21, 31 comprising a helicon spatter gun 21 having a Si target 24 capable of forming a film at a vacuum degree of 10^-4 Torr level in a vacuum chamber 2 having a vacuum degree of 10^-10 Torr and the helico spatter gun 31 having a C target 34. The SiC epitaxial device 1 is used to heat the Si substrate. Further, C₂H₂ gas is charged to form a carbide layer on the surface of the Si substrate 11 under a vacuum of 10^-5 Torr, and argon gas is charged into the vacuum chamber. Si and C are spattered in a stoichiometric ratio of 1:1 from the helicon spatter gun 21 and the helicon spatter gun 31, respectively, at ≥900°C under a vacuum of 10^-4 Torr level to form the epitaxial thin film of SiC.;COPYRIGHT: (C)1999,JPO