Growth of Epitaxial (SiC)_x(AIN)_(1-x) Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition

摘要

(SiC)_x(AlN)_(1-x) thin films have been grown epitaxially on vicinal 6H-SiC (0001) by low-energy ion assisted dual magnetron sputtering in UHV conditions. AES showed a decreasing Si and C content for an increasing magnetron power ratio, (P_(Al)/Psic)- The epitaxial quality of the films was improved as the SiC fraction increased. Films containing less than 5% of Si and C show an evolution of domain width similar to the growth of pure AlN. HRXRD show a decreased c-axis lattice parameter for a film with composition of AlNC_x (0≤x≤0.1), indicating carbon substitution in AlN. CL spectra show defect-related peaks of ～3.87 and ～4.70 eV, corresponding to O and C impurities respectively as well as on un-identified peak at ～3.40 eV.