METHOD FOR FORMING 3C-SIC EPITAXIAL THIN FILM AND SIC EPITAXIAL THIN FILM FORMED THEREBY

摘要

PPROBLEM TO BE SOLVED: To provide a method for forming a 3C-SiC epitaxial thin film and its product, in which the generation of a double position boundary (DPB) as one of crystal lattice defects is suppressed. PSOLUTION: In the method for forming the SiC epitaxial thin film with no DPBs, the 3C-SiC hetero-epitaxial thin film formed by the same method, and a semiconductor device composed of the 3C-SiC epitaxial thin film, in a process in which a SiC thin film is formed on a Si monocrystalline substrate or a crystalline Si film substrate, after the surface of the substrate is cleaned, it is coated with an oxide film. Thereafter, a film is formed on the pure surface of the substrate obtained by heating the oxide film in a vacuum and evaporating it. PCOPYRIGHT: (C)2005,JPO&NCIPI