SiC EPITAXIAL FILM-FORMING DEVICE AND MANUFACTURING METHOD OF SiC EPITAXIAL SEMICONDUCTOR DEVICE USING THE EPITAXIAL FILM-FORMING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial film-forming device in which epitaxial growth can be repeated for a plurality of times while avoiding the drop of SiC powder dust in the epitaxial device on a SiC substrate and suppressing a memory effect.;SOLUTION: The epitaxial SiC film-forming device has the following structure: in a heat resistant cylindrical tube 1 which has a reaction gas inlet hole and an exhaust hole at terminals in the axial direction and can be depressurized, a susceptor 3 with a prescribed length is disposed along the axial direction with a heat insulator 2 therebetween; in a reaction chamber 4 provided in the susceptor 3, a plurality of flat support base plates 5 are disposed mutually parallel and spaced in the up-and-down direction to be in a form where they can be conveyed out and in to place an SiC crystal substrate 5; an induction heating device is arranged outside the cylindrical tube 1 facing a position of the susceptor 3 and among the plurality of flat support base plates 5, a support base plate 11 at the upper side is disposed to further come out to the upper side of the gas flow from the end surface of the susceptor 3 or the heat insulator 2.;COPYRIGHT: (C)2009,JPO&INPIT