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机译:在可持续性宽带隙功率器件的硅顺应性基板和新型3C-SiC基板上异质外延生长3C-SiC(挑战)
CNR-IMM Headquarter;
CNR-IMM Headquarter;
CNR-IMM Headquarter;
UOS di Bologna CNR-IMM;
UOS di Bologna CNR-IMM;
University of Erlangen-Nuremberg;
LPE SpA;
LPE SpA;
Windmill Industrial Estate, Birmingham Road Anvil Semiconductors;
University of Milano-bicocca;
Bourget du Lac and CRHEA-CNRS Novasic;
Acreo AB;
Silvaco Technology Centre Compass Point Silvaco Europe Ltd;
MOVERIM Consulting Sprl;
Department of Physics, Chemistry and Biology Linköping University;
Department of Physics, Chemistry and Biology Linköping University;
Ion Beam Services;
Ion Beam Services;
School of Engineering University of Warwick;
School of Engineering University of Warwick;
STMicroelectronics;
STMicroelectronics;
CUSIC;
3C-SiC; PVT Growth; CVD Growth; Power Device;
机译:使用CVD生长的3C-SiC种子层通过VLS传输在硅衬底上外延生长3C-SiC
机译:退火3C-SiC /碳化硅在Si(111)衬底上外延石墨烯
机译:通过大气压化学气相沉积法在多晶硅衬底上生长的多晶3C-SiC薄膜的力学性能
机译:在硅顺应性基板上和用于可持续宽带间隙功率器件(挑战)的新型3C-SiC基板上的3C-SiC异质外延生长
机译:硅(Si)基板上的单向常态垂直碳化硅(3C-SiC)MESFET。
机译:倒置硅金字塔图案衬底上的3C-SiC生长
机译:硅衬底上生长的3C-SiC外延层的红外反射率研究