SiC EPITAXIAL WAFER, SiC EPITAXIAL WAFER MANUFACTURING APPARATUS, SiC EPITAXIAL WAFER MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: an SiC epitaxial wafer which is excellent in film thickness uniformity and carrier concentration uniformity, and which has less surface defect and high quality; an SiC epitaxial wafer manufacturing apparatus; an SiC epitaxial wafer manufacturing method; and a semiconductor device.SOLUTION: An SiC epitaxial wafer 1 comprises a substrate 2, and an SiC epitaxial grow layer 3 arranged on the substrate 2. The SiC epitaxial grow layer 3 includes: an Si compound as a supply source of Si; and a C compound as a supply source of C. Both of the Si compounds and C compounds or any one of them comprise a fluorine (F)-containing compound as a supply source. Here, the Si compound is generally represented as SiHClF(n=1, x=0, y=0, z=1, x+y+z=2n+2) and the C compound is generally represented as CHClF(m=1, q=0, r=0, s=1, q+r+s=2m+2).