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Study of Surface Morphologies of on-axis 6H-SiC Wafer after High-temperature Etching and Epitaxial Growth

机译：高温刻蚀和外延生长后轴上6H-siC晶片表面形貌的研究

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Xue-chao Liu; Jun Xin; Xi Liu; Yan-qing Zheng; Er-wei Shi;
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1. Study of Surface Morphologies of on-axis 6H-SiC Wafer after High-temperature Etching and Epitaxial Growth [J] . Xue-Chao Liu, Biao-Shi, Jun Xin, Materials science forum . 2014,第pta1期

机译：高温腐蚀和外延生长后同轴6H-SiC晶片的表面形貌研究
2. Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces: A scanning tunneling microscopy study [J] . M. Hupalo, E. H. Conrad, M. C. Tringides Physical review . 2009,第4期

机译：6H-SiC（0001）邻近表面上外延石墨烯的生长机理：扫描隧道显微镜研究
3. HF-(NH4)(2)S2O8-HCI Mixtures for HNO3- and NOx-free Etching of Diamond Wire- and SiC-Slurry-Sawn Silicon Wafers: Reactivity Studies, Surface Chemistry, and Unexpected Pyramidal Surface Morphologies [J] . Stapf Andre, Gondek Christoph, Lippold Marcus, ACS applied materials & interfaces . 2015,第16期

机译：HF-（NH4）（2）S2O8-HCl混合物，用于金刚石线和SiC浆料锯齿硅晶片的无HNO3和NOx蚀刻：反应性研究，表面化学和意外的金字塔形表面形态
4. Study of Surface Morphologies of on-axis 6H-SiC Wafer after High-temperature Etching and Epitaxial Growth [C] . Xue-Chao Liu, Biao-Shi, Juri Xin, Conference on Silicon Carbide and Related Materials . 2014

机译：高温蚀刻和外延生长后轴6H-SiC晶片表面形态的研究
5. Temporal evolution of surface structure and morphology in thin-film growth and etching processes. [D] . Drotar, Jason Todd. 2002

机译：薄膜生长和蚀刻过程中表面结构和形态的时间演变。
6. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique [O] . Hsin-Han Lin, Wen-Hwa Chen, Franklin C.-N. Hong -1

机译：通过使用自掩膜蚀刻技术在晶圆表面形成纳米级金字塔提高多晶硅晶圆太阳能电池效率
7. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching [O] . Onojima N, Suda J, Matsunami H 2002

机译：通过HCl气体蚀刻在表面可控6H-SiC衬底上生长绝缘AlN的分子束外延生长

Study of Surface Morphologies of on-axis 6H-SiC Wafer after High-temperature Etching and Epitaxial Growth

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