Epitaxial SrRuO_3 Thin Films Deposited on SrO Buffered-Si(OOl) Substrates for Ferroelectric Pb(Zr_(0.2)Ti_(0.8))O_3 Thin Films

摘要

SrRuO_3 thin film electrodes are epitaxially grown on SrO buffered-Si(001) substrates by pulsed laser deposition. The optimum conditions of the SrO buffer layers for epitaxial SrRuO_3 films are a deposition temperature of 700 deg C, deposition pressure of 1 x 10~(-6) Torr, and thickness of 6 nm. The 100 nm thick-SrRuO_3 bottom electrodes deposited above 650 deg C on SrO buffered-Si (001) substrates have a rms (root mean square) roughness of approximately 5.0 A and a resistivity of 1700 mu OMEGA-cm, exhibiting an epitaxial relationship. The 100 nm thick-Pb(Zr_(0.2)Ti_(0.8))O_3 thin films deposited at 575 deg C have a (00l) preferred orientation and exhibit 2P_r of 40 mu C/ cm~2, E_c of 100 kV/cm, and leakage current of about 1 x 10~(-7) A/cm~2 at 1 V. The silicon oxide phase which presents within PZT and SrRuO_3 films, influences the crystallinity of the PZT films and the resistivity of the SrRuO_3 electrodes.