In the present invention, Pb (Zr 1 -xTi x) O 3 ferroelectric thin film manufacturing method according to the sputtering method or a laser Pb (Zr 1 -xTi x) O 3 ferroelectric thin film manufacturing method using the assembly syeonbeop in the ferroelectric thin film production The Pb content (or PbO content) of the target component is adjusted so that the composition of the deposited thin film contains an excessive amount of PbO component in the range of 20-60%, or the deposition pressure is adjusted to 5-100 mTorr adjusted, the Pb (Zr 1 -xTi x) O 3 ferroelectric made to low-temperature deposition of thin films, 1) Pb (Zr 1 -xTi having excellent crystallinity even in a lower temperature than for existing without introducing a seed layer x ) O 3 ferroelectric thin film, 2) difficulty in controlling the composition of the thin film caused by high-temperature deposition, and reduction in switching characteristics of a ferroelectric memory device manufactured using the thin film, and 3) (Zr 1 -xTi x ) O 3 ferroelectric thin films. It is possible to realize a highly reliable Pb (Zr 1 -xTi x ) O 3 ferroelectric thin film which can be removed.
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