COMPOSITION FOR FORMING PZT-BASED FERROELECTRIC THIN FILM, MANUFACTURING METHOD THEREOF, AND METHOD FOR FORMING PZT-BASED FERROELECTRIC THIN FILM BY USE OF COMPOSITION FOR FORMING PZT-BASED FERROELECTRIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a composition for forming a PZT-based ferroelectric thin film which allows a dense thin film having high characteristics to be produced without forming void nor crack even if the thickness of a coating formed per coating operation is relatively thick, and which enables crystallization in one baking operation.SOLUTION: A composition for forming a PZT-based ferroelectric thin film comprises: PZT precursor; diol; polyvinylpyrrolidone or polyethylene glycol; water; and linear mono alcohol having 6-12 carbon chains. Of 100 mass% of the composition, the PZT precursor accounts for 17-35 mass% in terms of oxide concentration, and the diol accounts for 16-56 mass%. Further, in the composition, the polyvinylpyrrolidone or polyethylene glycol is included in the proportion of 0.01-0.25 mole to one mole of the PZT precursor, and the water is 0.5-3 mole to one mole of the PZT precursor; the linear mono alcohol is 0.6-10 mass% to 100 mass% of the composition.