Fabricating compound semiconductor epitaxial wafer comprises depositing silicon thin film on metal substrate, depositing compound semiconductor thin film on silicon buffer layer, and crystallizing compound semiconductor thin film

摘要

Fabricating compound semiconductor epitaxial wafer comprises: depositing silicon thin film on metal substrate; depositing compound semiconductor thin film on silicon buffer layer; crystallizing compound semiconductor thin film; applying first thermal treatment process; and applying second thermal treatment process. Fabricating compound semiconductor epitaxial wafer comprises: depositing a silicon thin film on a metal substrate to form a first silicon buffer layer; depositing a compound semiconductor thin film on the first silicon buffer layer to form a second compound semiconductor buffer layer; depositing a compound semiconductor thin film on the second compound semiconductor buffer layer to form a third compound semiconductor buffer layer; crystallizing a compound semiconductor thin film on the third compound semiconductor buffer layer to form a first compound semiconductor epitaxial layer; applying a first thermal treatment process; crystallizing a compound semiconductor thin film on the first compound semiconductor epitaxial layer to form a second compound semiconductor epitaxial layer; and applying a second thermal treatment process to complete fabricating a compound semiconductor epitaxial wafer. An independent claim is a compound semiconductor epitaxial wafer comprising: a metal substrate; a first silicon buffer layer, disposed on the metal substrate; a second compound semiconductor buffer layer, disposed on the first silicon buffer layer; a third compound semiconductor buffer layer, disposed on the second compound semiconductor buffer layer, and went through a first thermal treatment process; a first compound semiconductor epitaxial layer, disposed on the third compound semiconductor buffer layer; and a second compound semiconductor epitaxial layer, disposed on the first compound semiconductor epitaxial layer, and went through a second thermal treatment process.