首页> 外文期刊>Applied Physics Letters >Orientation dependence of dielectric and ferroelectric properties of Pb(Zr_(0.8)Ti_(0.2))O_3/Pb(Zr_(0.2)Ti_(0.8))O_3 multilayered thin films
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Orientation dependence of dielectric and ferroelectric properties of Pb(Zr_(0.8)Ti_(0.2))O_3/Pb(Zr_(0.2)Ti_(0.8))O_3 multilayered thin films

机译:Pb(Zr_(0.8)Ti_(0.2))O_3 / Pb(Zr_(0.2)Ti_(0.8))O_3多层薄膜的介电和铁电性能的取向依赖性

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摘要

The Pb(Zr_(1-x)Ti_x)O_3 multilayered films consisting of Pb(Zr_(0.8)Ti_(0.2))O_3 and Pb(Zr_(0.2)Ti_(0.8))O_3 layers with different orientations were deposited by radio frequency magnetron sputtering with PbO_x and LaNiO_3 (LNO) buffer layers. The PbO_x and LNO buffer layers lead to the (001)/(100) and (101)/(110) orientations of the multilayered films, respectively. The orientation dependence of electrical properties of the multilayered films was investigated. Enhanced remnant polarization (2P_r=79.3 μC/cm~2) and dielectric constant (ε_r=857) were obtained for the multilayered films with (001)/(100) orientation as compared to those of the multilayered films with other orientations. These results reveal that the orientation control is important in obtaining good electrical properties.
机译:通过射频沉积由不同方向的Pb(Zr_(0.8)Ti_(0.2))O_3和Pb(Zr_(0.2)Ti_(0.8))O_3层组成的Pb(Zr_(1-x)Ti_x)O_3多层膜具有PbO_x和LaNiO_3(LNO)缓冲层的磁控溅射。 PbO_x和LNO缓冲层分别导致多层膜的(001)/(100)和(101)/(110)取向。研究了多层膜的电性能的取向依赖性。与具有其他取向的多层膜相比,具有(001)/(100)取向的多层膜获得增强的残余极化(2P_r =79.3μC/ cm〜2)和介电常数(ε_r= 857)。这些结果表明,取向控制对于获得良好的电性能很重要。

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