Electrical Properties of Pb0.8Sn0.2Te Epitaxial Films.

机译：pb0.8sn0.2Te外延薄膜的电学特性。

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The temperature dependences of the Hall coefficient and resistivity of Pb0.8Sn0.2Te epitaxial films have been measured from 4.2 to 300K. The results show that no appreciable strain is induced in the epitaxial films grown on BaF2 substrates because of differential thermal contraction below room temperature. (Author)

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作者
lowney, j. r. bis, r. f.;
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年度 1977
页码 1-19
总页数 19
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Lead tin tellurides; Electrical resistivity; Hall effect; Semiconductors; Semiconducting films; Epitaxial growth; Temperature; Barium fluorides; Substrates; Thermal stresses; Shifting; Energy bands; Transport properties;

机译：碲化铅;电阻率;霍尔效应;半导体;半导体薄膜;外延生长;温度;氟化钡;基板;热应力;移动;能带;输运特性;

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1. Growth and electrical properties of high mobility epitaxial films of Pb0.8Sn0.2Te deposited by vacuum evaporation [J] . Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 1983,第4期

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2. Electrical properties of polycrystalline and epitaxially grown PZT thin films. [J] . Kouji Tokita, Masanori Aratani, Tomohiko Ozeki Key Engineering Materials . 2002,第期

机译：多晶和外延生长的PZT薄膜的电性能。
3. PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot‐wall technique [J] . Journal of Applied Physics . 1976,第7期

机译：通过改进的热壁技术在裂解的BaF2衬底上制备PbTe和Pb0.8Sn0.2Te外延膜
4. Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films. [C] . M.V. Yakushev, P. Maiello, T. Raadik European Materials Research Society Symposium . 2015

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7. Structure and Magnetic Properties of Epitaxial CrPt3 and Mn0.2Cr0.8Pt3 Alloy Films. [O] . K. Sugihara, H. Ito, T. Kato, 2001

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Electrical Properties of Pb0.8Sn0.2Te Epitaxial Films.

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