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New process technology for CD control in deep-submicron optical lithography

机译:深亚微米光学光刻中CD控制的新工艺技术

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An effective and practical control technology of critical dimensions for submicron VSLI is presented. An ARCOR (anti- reflective coating on resist) process was improved, which is applied as a transparent type anti-reflective coating. A water soluble and low refractive index film was developed for this purpose. The following five items were measured experimentally and discussed: (1) amplitude of swing curve's dependence on resist thickness, (2) thickness latitude of the ARCOR film, (3) photo speed, (4) CD variations in a submicron DRAM, and (5) alignment accuracy with a bright field alignment system.
机译:提出了亚微米VSLI临界尺寸的有效实际控制技术。改善了ARCOR(抗反射涂层)过程,其作为透明型抗反射涂层施加。为此目的开发了一种水溶性和低折射率薄膜。实验上测量了以下五个项目,并讨论:(1)摆动曲线幅度对抗蚀剂厚度的依赖性,(2)芯片的厚度纬度,(3)光速,(4)亚微米DRAM中的CD变化,( 5)用明场对准系统对准精度。

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