Along with the development of packaging technologies, the requirement for bump forming process have been advanced. To correspond these requirement, we have established the high speed and high quality Cu and Sn-Ag plating chemical as W25 and TS-507 - Feature void performance: optimize the UBM condition, fine grain Sn-Ag bump Coplanarity: improvement of basic performance. By using these chemical, we can achieve the good performance for micro bump with Cu pillar structure. We are convinced that the W25 and TS-507 are the ideal candidate for Cu pillar/ micro bump technologies.
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