Characterization of noise behavior of ultrathin inversion-channel and buried-channel SOI MOSFETs in the subthreshold bias range

摘要

This paper considers aspects of low-frequency noise in the inversion-channel SOI nMOSFET and the buried-channel SOI pMOSFET. Analyses suggest that the inversion channel is strongly influenced by interface traps, which also weakly influence the buried-channel. It is demonstrated that such aspects are significant in the subthreshold bias range.