Back-gate bias effect on the subthreshold behavior and the switching performance in an ultrathin SOI CMOS inverter operating at 77 and 300 K

摘要

The effect of back-gate bias on the subthreshold behavior and the switching performance in an ultrathin SOI CMOS inverter operating at 300 and 77 K is investigated using a low-temperature device simulator. The simulation results show that the nonzero back-gate bias induces hole pile-up at the back interface, which causes opposite effects on the NMOS and PMOS subthreshold characteristics at 300 and 77 K. Throughout the transient process, at 300 K, for V/sub B/=-5 V operation, hole pile-up at the back interface always exists in the NMOS device. Compared to the zero back-gate bias case, at V/sub B/=-5 V, the risetime of the SOI CMOS inverter is over 5% shorter at 77 and 300 K and the falltime is 5% longer. Prepinch-off velocity saturation in the NMOS device dominates the pull-down transient as a result of the smaller electron critical electric field.