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Suppression of back-gate transistors in RF CMOS switches built on an SOI substrate
Suppression of back-gate transistors in RF CMOS switches built on an SOI substrate
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机译:抑制构建在SOI衬底上的RF CMOS开关中的背栅晶体管
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摘要
The present disclosure relates to a silicon-on-insulator (SOI) substrate structure with a buried dielectric layer for radio frequency (RF) complementary metal-oxide semiconductor (CMOS) switch fabrications. The buried dielectric layer suppresses back-gate transistors in the RF CMOS switches fabricated on the SOI substrate structure. The SOI substrate structure includes a silicon handle layer, a silicon oxide layer over the silicon handle layer, a buried dielectric layer over the silicon oxide layer, and a silicon epitaxy layer directly over the buried dielectric layer.
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