首页> 外国专利> Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range

Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range

机译:具有亚阈值操作电路的半导体器件,该亚阈值操作电路包括基于温度范围的后体偏置电势

摘要

A semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at other operating temperatures. The temperature sensing circuit may provide a plurality of temperature ranges for setting the operational parameters. Each temperature range can include a temperature range upper limit value and a temperature range lower limit value and adjacent temperature ranges may overlap. The temperature ranges may be set in accordance with a count value that can incrementally change in response to the at least one temperature sensing circuit.
机译:公开了一种可以包括至少一个温度感测电路的半导体器件。温度感测电路可以用于控制各种操作参数,以在较宽的温度范围内改善半导体器件的操作。以此方式,可以在最坏情况下的温度下满足半导体器件的工作规格,而不会损害在其他工作温度下的性能。温度感测电路可以提供多个温度范围以用于设置操作参数。每个温度范围可以包括温度范围上限值和温度范围下限值,并且相邻的温度范围可以重叠。可以根据可响应于至少一个温度感测电路而逐渐变化的计数值来设置温度范围。

著录项

  • 公开/公告号US9939330B2

    专利类型

  • 公开/公告日2018-04-10

    原文格式PDF

  • 申请/专利权人 DARRYL G. WALKER;

    申请/专利号US201414265668

  • 发明设计人 DARRYL G. WALKER;

    申请日2014-04-30

  • 分类号G01K7/16;G11C7;G01K7;G01K13;H03K3/012;H03K17/14;H03K17/687;G11C7/04;G11C11/406;H03K17/22;H03K21/10;G11C11/4074;G11C11/4093;G11C11/4096;G11C11/407;G01K7/01;G01K3;

  • 国家 US

  • 入库时间 2022-08-21 12:54:49

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