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Semiconductor device including over voltage protection circuit having gate discharge circuit operated based on temperature and voltage as to output transistor
Semiconductor device including over voltage protection circuit having gate discharge circuit operated based on temperature and voltage as to output transistor
A semiconductor device includes an output transistor which controls a power supply to a load according to a control voltage applied to a gate thereof, a voltage control circuit coupled between the gate and a drain of the output transistor, the voltage control circuit having a conduction state controlled according to a potential difference between a source and the drain of the output transistor, and a voltage control detection circuit which outputs a voltage control detection signal on a basis of the conduction state of the voltage control circuit. A first discharge switch is connected between the gate and the source of the output transistor, an on-off state of the first discharge switch being controlled according to the voltage control detection signal, a second discharge switch is series-connected to the first discharge switch between the gate and the source of the output transistor, an on-off state of the second discharge switch being controlled according to a temperature condition of the output transistor, and a third discharge switch is connected in parallel with the first and second discharge switches.
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