ULTRATHIN SOI BIPOLAR TRANSISTOR FOR LOW SUBSTRATE BIAS ACTION PROVIDED WITH INVERTED COLLECTOR ON THIN EMBEDDED OXIDE FILM (BOX) AND METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a "non-collector" silicon-on-insulator (SOI) bipolar junction transistor not provided with an impurity doped collector.;SOLUTION: The bipolar transistor comprises a conductive backside electrode that receives an applied bias voltage, an insulating layer located on the conductive backside electrode, and an extrinsic collector containing a base containing a first conductivity type dopant and a second conductivity type dopant adjacent to the base and further comprises an emitter provided with a semiconductor layer located on the insulating layer and a second semiconductor layer located on a part of the base and containing the second conductivity type dopant. The conductive backside electrode is biased to form an inverted potential layer at an interface between the first semiconductor layer and the insulating layer in the base.;COPYRIGHT: (C)2005,JPO&NCIPI