Evaluation of interface trap density in advanced SOI MOSFETs

摘要

The density of traps at the top interface is difficult to assess in advanced SOI MOSFETs with high-K dielectric and ultrathin film. Searching for a characterization strategy, we compare various approaches: front-channel subthreshold slope, back-channel slope, and coupling coefficient between the front and back channels. The back-channel slope shows the largest variation with the front trap density. However, the resolution may not be sufficient for MOSFETs with very thin buried oxide.