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Method for measuring interface traps in thin gate oxide MOSFETs
Method for measuring interface traps in thin gate oxide MOSFETs
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机译:薄栅氧化物MOSFET中界面陷阱的测量方法
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摘要
A method for measuring interface traps in a MOSFET, comprising measuring charge pumping current of a pulse wave form for various frequencies over a predetermined frequency range, creating plotted points of the measured charge pumping current versus the predetermined frequency range, determining the total number of interface traps participating in the charge pumping current by calculating the slope of a best fit line through the plotted points.
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