FORWARD GATED—DIODE METHOD FOR DIRECTLY MEASURING STRESS—INDUCED INTERFACE TRAPS IN NMOSFET／SOI

摘要

Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter.This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics.For the tested device, an expected power law relationship of Δnit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.