Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors

摘要

This work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10~(-15) to 10~(-6) mol/L were tested. The sensor has a detection limit of 10~(-12) mol/L and saturates after the addition of 10~(-8) mol/L target-DNA.