High Temperature SiC Blocking Diodes for Solar Array

摘要

This paper presents the results of an experimental investigation of the performance of 300V-5A Silicon Carbide Ni and W Schottky diode operating in the range between -170?°C to 270?°C. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward and reverse performances.