AlGaN/GaN Transistors and Circuits

摘要

AlGaN/GaN transistors and circuits have been fabricated on semi-insulating SiC substrates. The process has been expanded to provide all the required elements of a full MMIC fabrication, including thin film resistors, MIM capacitors, and two levels of gold interconnect including air-bridge. Spiral inductors have been included in some designs. Large signal models of devices with various gate widths have been obtained, and a several experimental circuits with both microwave and digital functions, have been designed and measured.