AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取

摘要

本文在高电子迁移率晶体管(HEMT)小信号等效电路模型的基础上,考虑了AlGaN/GaN HEMT的结构特性,具体分析了寄生参数和本征参数的提取方法.采用这些方法,实际测量了5～10 GHz频率下HEMT器件的小信号S参数并提取了它的电学参数,S参数的计算值与实际测量值进行了比较.实验结果表明此方法简单易行,较为精确.%Considering the peculiarities of AlGaN/GaN high electron mobility transistors (HEMTs), a model of extracting parasitic and intrinsic parameters for HEMT's small signal equivalent circuit is presented. The electrical parameters and S-parameters at 5～10 GHz for the AlGaN/GaN HEMT device have been extracted with this model. The calculated S-parameters match the measured data well. It is indicated that this model is simple and feasible.