Growth of InAs/Sb:GaAs quantum dots on silicon emitting at 1.3 μm

摘要

We report the growth of self organized InAs/Sb:GaAs quantum dots (QDs) on silicon (Si) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). High density QDs aligned along [0-11] direction were obtained. These QDs exhibit ground state emission at 1.3 μm at room temperature (RT).