Comparative Study of 1.3 and 1.5 μm Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots

摘要

This study presents self-assembled quantum dots structures made on GaAs substrate. The samples were grown by Molecular Beam Epitaxy (MBE) in the Stranski-Krastanow (SK) growth mode. Two types of quantum dots structures are performed under different growth conditions and are compared: the first type is composed of two structures with InAs quantum dots encapsulated with (Ga, In) (N, As) and the second one with boxes wrapped with InGaAs. The influence of encapsulation of quantum dots is highlighted and as already shown, the redshift of emission wavelength depends on nitrogen doping. Further investigations are done through the incorporation of indium and nitrogen in the quantum dots structures in order to understand their optimal doping level on electrical and optical properties. The effects of temperature, an important growth parameter, are examined through images of nanostructures obtained by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) techniques.