OPTICALLY-DETECTED MICROWAVE RESONANCE IN InGaAsN/GaAs QUANTUM WELLS AND InAs/GaAs QUANTUM DOTS EMITTING AROUND 1.3 μm

摘要

Optically-detected magnetic resonance (ODMR) and optically-detected cyclotron resonance (ODCR) were applied to study two types of nanostructures emitting around 1.3 yum: quantum wells with low nitrogen content and InAs/GaAs quantum dots (both isolated and vertically-coupled). ODMR with the axial symmetry (effective g factor |g{sub}‖| = 3.61 and |g{sub}⊥| = 0.7) was found in unannealed InGaAsN/GaAs multiple-quantum well structures and ascribed to electrons in the quantum wells; the sign of g factor is suggested to be negative. There is evidence that before annealing the InGaAsN/GaAs structure has properties, which are typical for quantum wells, but after annealing the structure is completely-changed and resembles a quantum-dot-like structure. The effect of cyclotron resonance on the luminescence of InAs quantum dots was found. The observed ODCR seems to belong to a two-dimensional system, such as a heterointerface InAs/GaAs.