INFLUENCE OF THE GATE OXIDE TUNNELING EFFECT ON THE EXTRACTION OF THE SILICON FILM AND FRONT OXIDE THICKNESS IN SOI nMOSFET

摘要

This work analyzes the influence of the gate oxide tunneling current on the extraction of the silicon film and front oxide thickness on deep submicrometer fully depleted SOI nMOSFET devices. Numerical bidimensional simulations to support the analysis and experimental measurements were done using 0.13 |im SOI CMOS technology.