Method for determining effective gate oxide thickness and critical gate oxide thickness on the tunneling through thin gate oxide film

摘要

The present invention provides a method for determining effective gate oxide film thickness and critical gate oxide film thickness for tunneling of a gate oxide film in a metal-oxide-semiconductor (MOS) element structure having a semiconductor/material oxide film interface (Ge/a-GeO_2 or Si/a-SiO_2) in a MOS element including a semiconductor layer, a gate oxide film positioned on the semiconductor layer, and a gate electrode positioned on the gate oxide film. The method for determining effective gate oxide film thickness comprises: a step of using a first principle calculation method to generate an atomic structure of a MOS element; a step of calculating a projected density of electron states per atom (atom-PDOS) of the MOS element, and calculating a bandgap array of the MOS element based on the projected density of electron states per atom of the MOS element; and a step of comparing the atomic structure of the MOS element and the bandgap array of the MOS element to determine the thickness of an effective gate oxide.