Double gate memory cell has silicon substrate with active area, tunnel oxide film with amorphous silicon oxide and titanium dioxide mixed oxide, floating gate for storing electric charge, isolator layer made of dielectric material

摘要

Double gate memory cell has tunnel oxide film (7) with amorphous silicon oxide and titanium dioxide mixed oxide. A silicon substrate (1) with active area has channel area (11) and source/drain areas (4,3). Floating gate (5) for storing electric charge which is formed partially on surface of tunnel oxide film. Isolator layer (10) is made of dielectric material which is formed partially on the surface of floating gate. A control gate (8) is formed partially on the surface of the layer. An independent claim is also included for a flash-memory chip.