Influence of the Partial Pressure of Ethene on the Crystallinity of 3C-SiC Films Grown on Si(111) by Chemical Vapor Deposition

摘要

Single-crystal 3C-SiC films has been deposited on Si(111) substrates in a hot-wall chemical vapor deposition system. The temperature range for growing the SiC films is from 1030°C to 1130°C. The reaction precursors are SiH_4 and C_2H_4, while H_2 is the carrier gas. The effect of the partial pressure of ethene (P_(C2H4) on the film quality has been investigated by X-ray diffractometry and Raman scattering. Within the P_(C2H4) range in this work, the higher P_(C2H4) could help to improve the quality of 3C-SiC films. The thickness and refractive index of films was measured with spectroscopic ellipsometry. The effect of P_(C2H4) on the growth rate is also explained with the reported standpoint of the initial deposition process.