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Wafer Level Encapsulation For System In Package Generation

机译:包装生成中系统的晶圆级别封装

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As the development of microelectronics is still driving towards further miniaturization, Flip Chip and Waferlevel CSP technology have been widely accepted as a means for maximum miniaturization with additional advantages. Both package types do generally not include an encapsulation layer, but only die passivation and dielectric rewiring layers respectively. To fulfill the reliability demands of harsh environment applications, the use of an additional encapsulant is crucial. This is especially true for future applications as high temperature packages or miniaturized SiPs (system in package), where the encapsulant is protecting the sensitive structures generated on wafer level. After package assembly on the substrate, typically underfill materials are used to realize the liquid post encapsulation providing maximum protection and thus increased reliability. As these underfilling processes mean an extra process step, technologies are developed to replace post-assembly underfilling. A cost-effective way is to apply an encapsulant layer directly on bumped wafers and thus generate additional protection. Processes for wafer level encapsulation include wafer level molding, wafer level liquid encapsulation and wafer level printing, all three technologies bearing individual advantages and disadvantages. For wafer level SiP encapsulation the encapsulant acts not only as a simple mechanical protection of the active layer, the encapsulation can provide additional functionality. A 3D structuring of the encapsulation layer allows the integration of e.g. optical devices as micro lenses, assembly structures as grooves or adjustment aids. Using metallization and structuring techniques on the encapsulation layer in combination with an interlayer connection to the active structures on the wafer e. g. by solder bumps a wafer level rerouting process can be realized for a redistribution of contact pads with a relaxed pitch. Shielding structures and RF functionality by integrated antennas could be established in this way as well. Within this paper encapsulation technologies as transfer molding and printing have been investigated, focusing on the feasibility of reliable wafer encapsulation and the suitability of current materials. For these processes the potential of 3D structuring during the encapsulation has been evaluated. An electroless metallization process and laser techniques for structuring the metallization layer have been investigated for reliable interconnections. Summarized this paper presents the process development and feasibility of wafer level encapsulation technologies for SiP solutions.
机译:由于微电子的发展仍然旨在朝着进一步的小型化,倒装芯片和晶片vel CSP技术已被广泛接受为最大额外优点的方法。两个包装类型通常不包括封装层,而是仅包括钝化和介电重新加热层。为了满足苛刻的环境应用的可靠性需求,使用额外的密封剂是至关重要的。对于未来的应用尤其如此,适用于高温封装或小型化啜饮(包装中的系统),其中包封剂保护在晶片水平上产生的敏感结构。在基板上包装组件之后,通常底部填充材料用于实现封装后的液体封装,从而增加可靠性。由于这些底部填充过程意味着额外的过程步骤,开发了技术以取代组装后的欠填充。一种经济效益的方法是直接在凸点的晶片上施加密封层,从而产生额外的保护。晶圆级封装的工艺包括晶片级成型,晶片级液体封装和晶片级印刷,所有三种技术都具有占各个优点和缺点。对于晶圆级SIP封装,密封剂不仅是有源层的简单机械保护,封装可以提供额外的功能。封装层的3D结构允许整合例如。光学装置作为微透镜,装配结构作为凹槽或调节辅助装置。在封装层上使用金属化和结构化技术与与晶片E上的有源结构的层间连接组合。 G。通过焊料凸起,可以实现晶片水平重新排出的过程,以便具有宽松的间距的接触垫再分配。通过这种方式可以通过集成天线屏蔽结构和RF功能。在本文的封装技术中,已经研究了转移成型和印刷,专注于可靠的晶片封装的可行性和当前材料的适用性。对于这些处理,已经评估了在封装期间的3D结构的潜力。已经研究了用于结构化金属化层的化学金属化工艺和激光技术以进行可靠的互连。总结本文介绍了SIP解决方案的晶圆级封装技术的过程开发和可行性。

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