Rapid thermal MOCVD processing for InP-based devices

摘要

The Rapid Thermal Metal Organic Chemical Vapor Deposition technique (RT MOCVD) appears to be very attractive technology in the microelectronics industry for fabrication of thin and high quality semiconductor films with abrupt interfaces [1]. RT MOCVD uses rapid and precise changes in the substrate temperature driven by switching of halogen-tungsten lamps, to control layer growth rather than applying the gas phase switching technique normally used in the standard MOCVD technique. The differences between the two concepts are shown in Fig. 1. The main advantages of RT MOCVD system compare with regular MOCVD are as following: -elimination of the pre-processing long temperature wafer exposition step; -the ability to control the growth of abrupt interfaces; and the possibility to realize in-situ several steps of semiconductor device processing.