Effects of Post-Annealing by the Rapid Thermal Process on the Characteristics of MOCVD-Cu/TiN/Si Structures

KIM YOUN TAE; JUN CHI-HOON; KIM DAE YONG

首页> 外文期刊>Journal of Electronic Materials >Effects of Post-Annealing by the Rapid Thermal Process on the Characteristics of MOCVD-Cu/TiN/Si Structures

【24h】

Effects of Post-Annealing by the Rapid Thermal Process on the Characteristics of MOCVD-Cu/TiN/Si Structures

机译：快速热处理后退火对MOCVD-Cu / TiN / Si结构特性的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

著录项
相似文献
相关主题

著录项

来源
《Journal of Electronic Materials》 |1999年第4期|共3页
作者
KIM YOUN TAE; JUN CHI-HOON; KIM DAE YONG;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类材料;
关键词
Annealing; Cu/TiN/Si structures; metalorganic chemical vapor deposition(CVD);

机译：退火;Cu / TiN / Si结构;金属有机化学气相沉积（CVD）;

相似文献

外文文献
中文文献
专利

1. Effects of Post-Annealing by the Rapid Thermal Process on the Characteristics of MOCVD-Cu/TiN/Si Structures [J] . KIM YOUN TAE, JUN CHI-HOON, KIM DAE YONG Journal of Electronic Materials . 1999,第4期

机译：快速热处理后退火对MOCVD-Cu / TiN / Si结构特性的影响
2. The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection [J] . Chia-Hong Huang, Jenn-Gwo Hwu Solid-State Electronics . 2005,第10期

机译：快速热处理中的光子照射对通过衬底注入检测的具有超薄氧化物的MOS结构特性的影响
3. The effects of a combined thermal treatment of substrate heating and post-annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors [J] . Mi Ran Moon, Sekwon Na, Haseok Jeon, Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2012,第11a12期

机译：加热和后退火相结合的热处理对InGaZnO薄膜微观结构及其薄膜晶体管器件性能的影响
4. Ultra low thermal budget rapid thermal processing for thin gate oxide dielectrics: reduction of suboxide transition regions in low temperature processed Si/SiO_2 structures by a 900 deg C 30 second rapid thermal anneal [C] . G.Lucovsky, B.Hinds Symposium on rapid thermal and integrated processing . 1997

机译：薄栅极氧化物电介质的超低热预算快速热处理：低温处理的Si / SiO_2结构中的亚氧化物过渡区减少900℃30秒快速热处理
5. TiSi(2) formation by rapid thermal processing: Effects of processing on material properties. [D] . Amorsolo, Alberto Villar, Jr. 1996

机译：通过快速热处理形成TiSi（2）：处理对材料性能的影响。
6. Donor–acceptor-structured 14-diazatriphenylene derivatives exhibiting thermally activated delayed fluorescence: design and synthesis photophysical properties and OLED characteristics [O] . Takehiro Takahashi, Katsuyuki Shizu, Takuma Yasuda, 2014

机译：供体-受体结构的14-二氮杂苯并菲衍生物具有热活化的延迟荧光：设计与合成光物理性质和OLED特性
7. Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12thin films prepared by metalorganic solution deposition technique [O] . P. C. Joshi, S. B. Desu 1996

机译：通过金属有机溶液沉积技术制备的快速热处理铁电BI4TI3O12膜的结构和电气特性
8. Effects of Rapid Thermal Processing on the Formation of Uniform Tetragonal Tungsten Disilicide Films on Si(100) Substrates [R] . Santiago, J. J., Siegal, M. P. 1988

机译：快速热处理对si（100）衬底上均匀四方二硅化钨薄膜形成的影响

Effects of Post-Annealing by the Rapid Thermal Process on the Characteristics of MOCVD-Cu/TiN/Si Structures

著录项

相似文献

相关主题

期刊订阅