首页>
外国专利>
SEMICONDUCTOR DEVICES HAVING FE-DOPED MOCVD INP-BASED LAYER
SEMICONDUCTOR DEVICES HAVING FE-DOPED MOCVD INP-BASED LAYER
展开▼
机译:具有FE掺杂的MOCVD INP层的半导体器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
AbstractHigh resistivity Fe-doped InP-based MOCVD layersare used to constrain current to flow through the activeregion of a variety of devices such as CSBH and DCPBHlasers.
展开▼