Electrical Properties of Ultrathin Stacked SiO_2/ZrO_2 Gate Dielectrics

摘要

In this paper, we report the electrical properties of ultrathin stacked SiO_2/ZrO_2 gate dielectrics deposited on p-type silicon wafer. The effective dielectric constant of the stacked layer is found to be 12.2 and a constant current stressing shows the evidence of positive charges in the stacked layer.