Temperature dependence of electrical properties for MOS capacitor with HfO_2/SiO_2 gate dielectric stack

摘要

We investigated the temperature dependence of C-V and I-V characteristics in p-type Metal Oxide Semiconductor (MOS) capacitors with HfO_2/SiO_2 dielectric stacks. Dramatic degradation in the C-V characteristics at/over the measurement temperature of 125 °C was observed, which was caused by the increased effective oxide thickness, oxide trapped charge density, and interfacial density of state (D_(it)) with rising temperature during bias temperature stress. In the accumulation region, the leakage current density displayed strong temperature dependence in the -3V