Electrical properties of polycrystalline p-Cu_xO MOS capacitors with SiO_2/HfO_2 high κ stack gate dielectric on Silicon substrate

摘要

Polycrystalline p-type Cu_xO film was deposited after growth of HfO_2 dielectric on Si substrate by pulsed laser deposition, and Cu_xO MOS capacitors with SiO_2/HfO_2 stack gate dielectric have been primarily fabricated and investigated. Results of measurements indicate that capacitance equivalent thickness and equivalent κ-value of SiO_2/HfO_2 stack dielectric for post-deposition annealing (PDA) sample are 4.78 nm and 10.2 respectively, and gate leakage current density is ～10~(-4) A/cm~2 at V_g = -1 V. Results also show that PDA can improve quality of interface and reduce gate leakage.