Method of fabricating stacked N-O-N ultrathin gate dielectric structures
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机译:堆叠式N-O-N超薄栅极介电结构的制造方法
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摘要
The present invention is an improved semiconductor device and an improved method of manufacturing a semiconductor device. The present invention deposits a layer of oxynitride where gate oxidation would normally take place. Alternatively, the method according to the present invention uses a plurality of layers of dielectric material where gate oxidation would normally take place including a layer of oxynitride having a nitrogen content. The layer of oxynitride is deposited under a predetermined pressure using a stream of gas, wherein insensitivity to defects on a surface of the substrate results from the oxynitride layer.
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