Studies on GaAs/AlGaAs based (p and n-type) Quantum Well Infrared Photodetector Structures grown using MOVPE

摘要

GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector structures were grown using metal organic vapour phase epitaxy (MOVPE). The crystalline quality, optical properties, carrier doping profile and intersubband absorption were studied in detail. These studies were carried out with overall motivation to understand whether p-QWIPs can have comparable or better performance than n-QWIPs considering normal incidence and device processing advantages.