首页> 外文OA文献 >MOVPE growth and properties of 111A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures

【2h】

MOVPE growth and properties of 111A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures

机译：111 A取向压电InGaAs / GaAs / AlGaAs高应变量子阱激光器结构的MOVPE生长和性能

页面导航

著录项
相似文献
相关主题

著录项

作者
Kim Jongseok; Cho Soohaeng; Majerfeld A.; Sanz-Hervás A.; Patriarche G.; Kim B. W.;
展开▼
作者单位

展开▼
年度 2004
总页数
原文格式 PDF
正文语种
中图分类
入库时间 2022-08-20 20:12:08

相似文献

外文文献
中文文献
专利

1. <111>-Oriented GaAs/AlGaAs and inGaAs/GaAs quantum well structures fabricated by MOVPE and their optical and strain-induced piezoelectric properties [J] . S. Cho, A. Sanz-Hervas, J. Kim, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2000,第1期

机译：MOVPE制备的<111>取向的GaAs / AlGaAs和inGaAs / GaAs量子阱结构及其光学和应变感应压电特性
2. High-power highly reliable 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE] [J] . Yuda M., Temmyo J., Sasaki T., Electronics Letters . 2003,第8期

机译：通过InGaAs阱层的低温生长获得高功率，高可靠性的1.06 / splμm/ m InGaAs应变量子阱激光二极管[MOVPE]
3. MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [111]A-oriented substrates [J] . Jongseok Kim, Soohaeng, Cho Journal of Crystal Growth . 2001,第2a4期

机译：[111] A取向衬底上高应变压电InGaAs / GaAs量子阱的MOVPE生长
4. Interfacial and piezoelectric properties of highly strained InGaAs/GaAs quantum well structures grown on (111)A GaAs substrates by MOVPE [C] . Jongseok Kim, Soohaeng Cho, Alfredo Sanz-Hervas, International Symposium on Compound Semiconductors . 2003

机译：高度应变的InGaAs / GaAs量子井结构的界面和压电性能（111）通过MOVPE的GaAs基材生长
5. Piezoelectric indium gallium arsenide/gallium arsenide strained quantum well structures on (111)A gallium arsenide: MOVPE growth, properties, and application to semiconductor lasers. [D] . Kim, Jongseok. 2003

机译：（111）A砷化镓上的压电铟砷化镓/砷化镓应变量子阱结构：MOVPE的生长，性质及其在半导体激光器中的应用。
6. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection [O] . Zhenwu Shi, Lu Wang, Honglou Zhen, 2013

机译：峰值波长控制的InGaAs / AlGaAs量子阱的分子束外延生长用于4.3μm中波长红外检测
7. Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs [O] . Yang GW, Xu ZT, Xu JY, 1998

机译：使用新型InGaAsP和AlGaAs混合材料系统生长和制备高性能980nm应变InGaAs量子阱激光器
8. Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies [R] . Goodhue, W. D., Donnelly, J. P., Wang, C. A., 1991

机译：单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列，具有超过50％的差分量子效率

MOVPE growth and properties of 111A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures

著录项

相似文献

相关主题

期刊订阅